2SD2029

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2029 DESCRIPTION ・With TO-3PL package ・Complement to type 2SB1347 ・Wide area of safe operation ・High transition frequency APPLICATIONS ・Optimum for the output stage of a Hi-Fi audio amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Fig.1 simplified outline (TO-3PL) and symbol Emitter DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 120 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE 160 160 5 12 20 3.5 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 hFE-3 fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IC=8A ;IB=0.8A IC=8A ; VCE=5V VCB=160V; IE=0 VEB=3V; IC=0 IC=20mA ; VCE=5V IC=1A ; VCE=5V IC=8A ; VCE=5V IC=0.5A ; VCE=5V;f=1MHz IE=0;f=1MHz;VCB=10V 20 60 20 MIN 160 2SD2029 TYP. MAX UNIT V 2.0 1.8 50 50 V V μA μA 200 20 210 MHz pF hFE-2 classifications Q 60-120 S 80-160 P 100-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2029 Fig.2 Outline dimensions (unindicated tolerance:±0.50mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2029 4