2SD2033

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2033 DESCRIPTION ·Good Linearity of hFE · Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) ·Complement to Type 2SB1353 APPLICATIONS ·Designed for use in high voltage driver applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 5.0 V IC Collector Current-Continuous Collector Power Dissipation @ Ta=25℃ 1.5 A 1.8 W PC Collector Power Dissipation @TC=25℃ TJ Junction Temperature 20 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD2033 TYP. MAX UNIT V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 120 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 0.1mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 1A; IB= 0.1A B 2.0 V ICBO Collector Cutoff Current VCB= 120V; IE= 0 10 μA IEBO Emitter Cutoff Current VEB= 5V; IC=0 10 μA hFE DC Current Cain IC= 0.1A ; VCE= 5V 60 320 fT Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 5V 50 MHz hFE Classifications D 60-120 E 100-200 F 160-320 isc Website：www.iscsemi.cn 2