2SD2045

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2045 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 2000(Min) @ IC= 3A, VCE= 2V APPLICATIONS ·Designed of driver of solenoid,motor and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 6 A ICM Collector Current-Peak 10 A IB B Base Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature 1 A PC 50 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD2045 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA ; IB= 0 120 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 3mA B 1.5 V VBE(sat) ICBO Base-Emitter Saturation Voltage IC= 3A; IB= 3mA B 2.0 V μA Collector Cutoff Current VCB= 120V; IE= 0 10 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 10 mA hFE DC Current Gain IC= 3A; VCE= 2V 2000 fT Current-Gain—Bandwidth Product IE= -1A; VCE= 12V 50 MHz COB Output Capacitance IE= 0; VCB= 10V,ftest= 1MHz 70 pF Switching times μs μs μs ton Turn-on Time IC= 3A; IB1= -IB2= 3mA; RL= 10Ω; VCC= 30V 0.5 tstg Storage Time 5.5 tf Fall Time 1.5 isc Website：www.iscsemi.cn 2