2SD2053

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2053 DESCRIPTION ・With TO-3PN package ・Wide area of safe operation ・Complement to type 2SB1362 APPLICATIONS ・For high power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC ICP PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Collector current (Pulse) Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 100 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 150 150 5 9 15 2.5 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD2053 TYP. MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=25mA; IB=0 150 V VCEsat Collector-emitter saturation voltage IC=7A; IB=0.7A 2.0 V VBE Base-emitter on voltage IC=7A;VCE=5V 1.8 V μA μA ICBO Collector cut-off current VCB=150V; IE=0 50 IEBO Emitter cut-off current VEB=5V; IC=0 50 hFE-1 DC current gain IC=20mA ; VCE=5V 20 hFE-2 DC current gain IC=1A ; VCE=5V 60 200 hFE-3 DC current gain IC=7A ; VCE=5V 15 fT Transition frequency IC=0.5A ; VCE=5V 20 MHz COB Collector output capacitance f=1MHz;VCB=10V 150 pF hFE-2 Classifications Q 60-120 P 100-200 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2053 Fig.2 outline dimensions 3