2SD2057

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2057 DESCRIPTION ・With TO-3PFa package ・High voltage,high speed ・Built-in damper diode ・Wide area of safe operation APPLICATIONS ・Horizontal deflection output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VEBO IC ICM IB PARAMETER Collector-base voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25℃ PC Collector power dissipation TC=25℃ Tj Tstg Max.operating junction temperature Storage temperature 100 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open collector VALUE 1500 7 5 20 4 3 W UNIT V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD2057 TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=500mA ;IC=0 7 V VCEsat VBEsat Collector-emitter saturation voltage IC=5A; IB=1.2A IC=5A; IB=1.2A 8.0 V Base-emitter saturation voltage 1.5 V μA VCB=1000V; IE=0 ICBO Collector cut-off current VCB=1500V; IE=0 30 0.3 mA hFE-1 DC current gain IC=1A ; VCE=5V 8 hFE-2 DC current gain IC=5A ; VCE=10V 4.5 15 fT VF Transition frequency IC=1A ; VCE=10V;f=0.5MHz IC=-6A ;IB=0 2 MHz Diode forward voltage -2.3 V μs μs ts Storage time IC=5A;IB1=-IB2=1.2A;LLeak=5μH 12 tf Fall time 0.8 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2057 Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3