2SD2058

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2058 DESCRIPTION ・With TO-220F package ・Complement to type 2SB1366 ・Low collector saturation voltage: VCE(SAT)=1.0V(Max) at IC=2A,IB=0.2A ・Collector power dissipation: PC=25W(TC=25℃) APPLICATIONS ・With general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Ta=25℃ PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE 60 60 7 3 0.5 1.5 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IC=2A ;IB=0.2A IC=0.5A;VCE=5V VCB=60V;IE=0 VEB=7V; IC=0 IC=0.5A ; VCE=5V IC=0.5A ; VCE=5V f=1MHz;VCB=10V 60 3.0 35 3.0 MIN 60 2SD2058 TYP. MAX UNIT V 1.5 V V 10 1.0 μA mA MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=2.0A; IB1=-IB2=0.2A VCC=30V ,RL=15Ω 0.65 1.30 0.65 μs μs μs hFE Classifications O 60-120 Y 100-200 G 150-300 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2058 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2058 4