2SD2059

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2059 DESCRIPTION ・With TO-220F package ・Complement to type 2SB1367 ・Low collector saturation voltage: VCE(SAT)=2.0V(Max) at IC=4A,IB=0.4A ・Collector power dissipation: PC=30W(TC=25℃) APPLICATIONS ・With general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 100 100 5 5 0.5 30 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter on voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IC=4A ;IB=0.4A IC=1A;VCE=5V VCB=100V;IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V IC=1A ; VCE=5V f=1MHz;VCB=10V 40 20 12 100 MIN 100 TYP 2SD2059 MAX UNIT V 2.0 1.5 0.1 1.0 240 V V mA mA MHz pF hFE-1 Classifications R 40-80 O 70-140 Y 120-240 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2059 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2059 4