2SD2079

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2079 DESCRIPTION ・With TO-220F package ・DARLINGTON ・High DC current gain ・Low collector saturation voltage ・Complement to type 2SB1381 APPLICATIONS ・High power switching applications ・Hammer drive,pulse motor drive applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-220F) and symbol Emitter DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25℃ PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 30 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 100 100 7 5 8 0.5 2 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat-1 VCEsat-2 VBEsat ICBO IEBO hFE-1 hFE-2 PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain CONDITIONS IC=30mA ;IB=0 IC=3A ;IB=6mA IC=5A ;IB=20mA IC=3A ;IB=6mA VCB=100V; IE=0 VEB=6V; IC=0 IC=3A ; VCE=3V IC=5A ; VCE=3V 2000 1000 MIN 100 2SD2079 TYP. MAX UNIT V 1.5 2.5 2.5 100 2.5 15000 V V V μA mA Switching times ton ts tf Turn-on time Storage time Fall time IB1=-IB2=6mA VCC≈30V ,RL=10Ω 1.0 4.0 2.5 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2079 Fig.2 Outline dimensions 3