2SD2081

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2081 DESCRIPTION ·High DC Current Gain: hFE= 2000(Min)@ (VCE= 4V, IC= 5A) ·Large Current Capability ·Complement to Type 2SB1259 APPLICATIONS ·Driver for solenoid, motor and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A ICM Collector Current-Pulse 15 A IB Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature 1 A PC 30 W TJ 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD2081 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 120 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 5mA B 1.5 V VBE(sat) ICBO Base-Emitter Saturation Voltage IC= 5A; IB= 5mA B 2.0 V μA Collector Cutoff Current VCB= 120V; IE= 0 10 IEBO Emitter Cutoff Current VEB= 6V; IC= 0 10 mA hFE DC Current Gain IC= 5A; VCE= 4V 2000 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1.0MHz IE= -0.5A; VCE= 12V 95 pF fT Current-Gain—Bandwidth Product 60 MHz isc Website：www.iscsemi.cn 2