2SD2082

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2082 DESCRIPTION ・With TO-3PML package ・DARLINGTON ・Complement to type 2SB1382 APPLICATIONS ・Driver for Solenoid, Motor and General Purpose PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 120 120 6 16 26 1 75 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2082 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEsat VBEsat V(BR)CEO IEBO ICBO hFE fT COB PARAMETER Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter breakdown voltage Emitter cut-off current Collector cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=8A;IB=16m A IC=8A;IB=16m A IC=10mA;IB=0 VEB=6V; IC=0 VCB=120V; IE=0 IC=8 A ; VCE=4V IC=1 A ; VCE=12V IE=0 ; VCB=10V;f=1MHz 2000 20 210 MHz pF 120 10 10 MIN TYP. MAX 1.5 2.5 UNIT V V V mA μA Switching times ton ts tf Turn-on time Storage time Fall time IC=8A ;IB1=-IB2=16mA VCC=40V ,RL=5Ω 0.6 7.0 1.5 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2082 Fig.2 Outline dimensions 3