2SD2083

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2083 DESCRIPTION ·High DC Current Gain : hFE= 2000(Min.)@ IC= 12A, VCE= 4V ·High Collector-Emitter Breakdown Voltage: V(BR)CEO = 120V(Min) ·Complement to Type 2SB1383 APPLICATIONS ·Designed for driver of solenoid, motor and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 6 V IC ICM Collector Current-Continuous 25 A Collector Current-Peak 40 A IB B Base Current- Continuous Collector Power Dissipation @TC=25℃ Junction Temperature 2 A PC 120 W ℃ ℃ Tj 150 Tstg Storage Temperature Range -55~150 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff current Emitter Cutoff current DC Current Gain Output Capacitance Current-Gain—Bandwidth Product CONDITIONS IC= 25mA ,IB= 0 B 2SD2083 MIN 120 TYP. MAX UNIT V IC= 12A ,IB= 24mA IC= 12A ,IB= 24mA VCB= 120V, IE= 0 VEB= 6V, IC= 0 IC= 12A ; VCE= 4V IE= 0; VCB= 10V; ftest= 1MHz IE= -1A ; VCE= 12V 2000 340 20 1.8 2.5 10 10 V V μA mA pF MHz Switching Times Turn-On Time Storage Time Fall Time IC = 12A,IB1 = -IB2= 24mA; VCC= 24V, RL= 2Ω 1.0 6.0 1.0 μs μs μs ton tstg tf isc Website：www.iscsemi.cn