2SD2093

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3PML package ・DARLINGTON ・Complement to type 2SB1388 ・High DC current gain ・Low saturation voltage ・Large current capacity and large ASO APPLICATIONS ・Motor drivers ・Printer hammer drivers ・Relay drivers, ・Voltage regulator control PINNING PIN 1 2 3 Base DESCRIPTION 2SD2093 Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER 体 TOR 半导 NDU 固电 ICO E SEM ANG INCH Collector Emitter CONDITIONS VALUE 110 100 6 10 15 TC=25℃ 45 Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Open emitter Open base Open collector Fig.1 simplified outline (TO-3PML) and symbol UNIT V V V A A PC Collector power dissipation 3.0 W Tj Tstg Junction temperature Storage temperature 150 -55~150 ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2093 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. MAX UNIT VCEsat Collector-emitter saturation voltage IC=5A;IB=10m A 0.9 V VBEsat V(BR)CEO Base-emitter saturation voltage IC=5A;IB=10m A IC=5mA;IB=0 IC=50mA;RBE=∞ 110 2.0 V Collector-emitter breakdown voltage V V(BR)CBO Collector-base breakdown voltage 100 V IEBO Emitter cut-off current VEB=5V; IC=0 3.0 mA ICBO Collector cut-off current VCB=80V; IE=0 0.1 mA hFE fT Switching times ton ts 体 TOR 半导 NDU 固电 ICO E SEM ANG INCH DC current gain IC=5 A ; VCE=3V 1500 4000 Transition frequency IC=5 A ; VCE=5V 20 Turn-on time 0.6 Storage time IC=5A IB1=-IB2=10mA VCC=50V ,RL=10Ω 4.8 Fall time 1.6 MHz μs μs μs tf 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2093 体 TOR 半导 NDU 固电 ICO E SEM ANG INCH Fig.2 Outline dimensions 3