2SD2095

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2095 DESCRIPTION ・With TO-3P(H)IS package ・Built-in damper diode ・High voltage ,high speed ・Low collector saturation voltage APPLICATIONS ・For color TV horizontal output applications PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 5 2.5 50 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD2095 TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=200mA , IC=0 5 V VCEsat Collector-emitter saturation voltage IC=3.5A; IB=0.8A 3.0 5.0 V VBEsat Base-emitter saturation voltage IC=3.5A; IB=0.8A 1.5 V ICBO Collector cut-off current VCB=500V; IE=0 10 μA hFE DC current gain IC=1A ; VCE=5V 8 fT Transition frequency IC=0.1A ; VCE=10V 3 MHz COB Collector output capacitance IE=0 ; VCB=10V;f=1MHz 105 pF VF Diode forward voltage IF=5A 1.6 2.0 V tf Fall time ICP=3.5A ;IB1(end)=0.8A 0.5 1.0 μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2095 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3