2SD2107

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2107 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 60V (Min) ·Low Collector Saturation Voltage APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 70 V VCEO Collector-Emitter Voltage 60 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A ICM Collector Current-Peak Collector Power Dissipation @ TC=25℃ 8 A 25 W PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 2 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD2107 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA ; RBE= ∞ IC= 10μA; IE= 0 IE= 10μA; IC= 0 60 V V(BR)CBO Collector-Base Breakdown Voltage 70 V V(BR)EBO Emitter-Base Breakdown Voltage 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 1.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 2A; IB= 0.2A B 1.2 V VBE(on) ICBO Base-Emitter On Voltage IC= 1A ; VCE= 4V 1.0 V μA μA Collector Cutoff Current VCB= 60V; IE= 0 VCE= 60V; RBE= ∞ 10 ICEO Collector Cutoff Current 10 hFE-1 DC Current Gain IC= 1A ; VCE= 4V 60 200 hFE-2 DC Current Gain IC= 0.1A ; VCE= 4V 35 hFE-1 classifications B 60-120 C 100-200 isc Website：www.iscsemi.cn 2