2SD2112

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2112 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 120V(Min) ·Collector-Emitter Saturation Voltage: VCE(sat)= 1.5V(Max) @IC= 3A ·High DC Current Gain : hFE= 1000(Min) @ IC= 3A, VCE= 3V APPLICATIONS ·Designed for low frequency power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC ICM Collector Current-Continuous 6 A Collector Current-Peak Collector Power Dissipation @ TC=25℃ 12 A 25 W PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 2 150 ℃ ℃ Tstg Storage Temperature Range -55~150 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD2112 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA ; RBE= ∞ 120 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA; IE= 0 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA; IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 3A; IB= 6mA B 1.5 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 6A; IB= 60mA B 3.0 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 3A; IB= 6mA B 2.0 V VBE(sat)-2 ICBO Base-Emitter Saturation Voltage IC= 6A; IB= 60mA B 3.5 V μA μA Collector Cutoff Current VCB= 100V; IE= 0 VCE= 100V; RBE= ∞ 10 ICEO Collector Cutoff Current 10 hFE DC Current Gain IC= 3A; VCE= 3V 1000 20000 VECF C-E Diode Forward Voltage IF= 6A 3.0 V isc Website：www.iscsemi.cn 2