2SD2125

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2125 DESCRIPTION ・With TO-3P(H)IS package ・Built-in damper diode ・High voltage ,high speed ・Low saturation voltage APPLICATIONS ・Horizontal output applications for color TV ・Medium resolution display PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol ・ Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 6 10 3 50 150 -55~150 V A A A W ℃ ℃ UNIT V Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO VCEsat VBEsat ICBO hFE-1 hFE-2 fT COB VF tf PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain DC current gain Transition frequency Collector output capacitance Diode forward voltage Fall time CONDITIONS IE=200mA , IC=0 IC=5A ;IB=1A IC=5A ;IB=1A VCB=500V; IE=0 IC=1A ; VCE=5V IC=5A ; VCE=5V IC=0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz IF=6A ICP=5A ;IBL=1A;VCC=100V 8 5 3 MIN 5 3.0 2SD2125 TYP. MAX UNIT V 5.0 1.5 10 20 V V μA MHz pF 2.0 0.5 V μs 165 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2125 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3