2SD2151

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2151 DESCRIPTION ・With TO-220Fa package ・Low collector to emitter saturation voltage ・Large collector current IC APPLICATIONS ・For power switching applicaitons PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-220Fa) and symbol ・ Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 2 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE 130 80 7 10 20 30 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat-1 VCEsat-2 VBE sat-1 VBE sat-2 ICBO IEBO hFE-1 hFE-2 hFE-3 fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain DC current gain Transition frequency CONDITIONS IC=10mA, IB=0 IC=6A; IB=0.3A IC=10A; IB=1A IC=6A; IB=0.3A IC=10A; IB=1A VCB=100V; IE=0 VEB=5V; IC=0 IC=0.1A ; VCE=2V IC=3A ; VCE=2V IC=6A ; VCE=2V IC=0.5A ; VCE=10V;f=1MHz 45 90 30 20 MIN 80 2SD2151 TYP. MAX UNIT V 0.5 1.5 1.5 2.5 10 50 V V V V μA μA 260 MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=6A ;IB1=-IB2=0.6A VCC=50V 0.5 2.0 0.2 μs μs μs hFE-2 Classifications Q 90-180 P 130-260 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2151 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3