2SD2155

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2155 DESCRIPTION ・With TO-3PL package ・Complement to type 2SB1429 APPLICATIONS ・Power amplifier applications ・Recommend for 100W high fidelity audio frequency amplifier output stage PINNING PIN 1 2 3 DESCRIPTION Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 180 180 5 15 1.5 150 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBE ICBO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IC=8A ;IB=0.8A IC=6A ; VCE=5V VCB=180V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=6A ; VCE=5V IC=1A ; VCE=5V IC=0; f=1MHz;VCB=10V 55 30 MIN 180 2SD2155 TYP. MAX UNIT V 2.0 1.5 5 5 160 V V μA μA 10 160 MHz pF hFE-1 classifications R 55-110 O 80-160 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2155 Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2155 4