2SD2222

Inchange Semiconductor Product Specification Silicon NPN Power Transistors DESCRIPTION ・With TO-3PL package ・Complement to type 2SB1470 ・High DC current gain ・Low saturation voltage VCE(sat) ・DARLINGTON APPLICATIONS ・For power amplification PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION 2SD2222 Fig.1 simplified outline (TO-3PL) and symbol Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector power dissipation Ta=25℃ Tj Tstg Junction temperature Storage temperature 3.5 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 160 160 5 8 15 120 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency CONDITIONS IC=30mA ;IB=0 IC=7A ;IB=7mA IC=7A ;IB=7mA VCB=160V; IE=0 VCE=160V; IB=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=7A ; VCE=5V IC=0.5A ; VCE=10V;f=1MHz 1000 3500 20 MIN 160 TYP. 2SD2222 MAX UNIT V 3.0 3.0 100 100 100 V V μA μA μA 20000 MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=7A ;IB1=-IB2=7mA VCC=50V 2.0 6.0 1.2 μs μs μs hFE-2 classifications Q 3500-10000 P 7000-20000 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2222 Fig.2 Outline dimensions (unindicated tolerance:±0.50 mm) 3