2SD2236

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2236 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min.) ·Wide Area of Safe Operation ·Complement to Type 2SB1477 APPLICATIONS ·Designed for driver and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 5 A PC Collector Power Dissipation @ TC=25℃ 60 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD2236 TYP. MAX UNIT V(BR)CEO Collector-Emitter Beakdown Voltage IC= 10mA; IB= 0 IC= 50μA; IE=0 IE= 50μA; IC=0 100 V V(BR)CBO Collector-Base Beakdown Voltage 100 V V(BR)EBO Emitter-Base Beakdown Voltage 5 V VCE(sat) VBE(sat) ICBO Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.5 V Base-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 2.0 V μA μA Collector Cutoff Current VCB= 100V; IE= 0 10 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 10 hFE DC Current Gain IC= 1A; VCE= 5V 60 320 hFE Classifications D 60-120 E 100-200 F 160-320 isc Website：www.iscsemi.cn 2