2SD2237

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2237 DESCRIPTION ·High DC Current Gain: hFE = 2000(Min)@ IC= 2A ·Low Collector Saturation Voltage: VCE(sat) = 2.0V(Max.) @IC= 5A ·Complement to Type 2SB1478 APPLICATIONS ·Designed for power linear and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 100 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature 8 A PC 60 W Tj 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD2237 MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA, IB= 0 100 V V(BR)CBO Collector-Base Breakdown Voltage IC= 50μA; IE=0 100 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 2mA; IC=0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A, IB= 20mA B 2.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A, IB= 20mA B 2.5 V ICBO Collector Cutoff current VCB= 100V, IE= 0 10 μA IEBO Emitter Cutoff current VEB= 5V, IC= 0 2 mA hFE DC Current Gain IC= 2A; VCE= 3V 2000 20000 isc Website：www.iscsemi.cn