2SD2250

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2250 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 140V(Min) ·High DC Current Gain: hFE= 5000( Min.) @(IC= 6A, VCE= 5V) ·Low Collector Saturation Voltage: VCE(sat)= 2.5V(Max)@ (IC= 6A, IB= 6mA) ·Complement to Type 2SB1490 B APPLICATIONS ·Designed for power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 140 V VEBO IC Emitter-Base Voltage 5 V Collector Current-Continuous 7 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ 12 A 3.5 W PC Collector Power Dissipation @TC=25℃ TJ Tstg Junction Temperature 90 150 ℃ ℃ Storage Temperature -55~150 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product CONDITIONS IC= 30mA; IB= 0 IC= 6A; IB= 6mA B 2SD2250 MIN 140 TYP. MAX UNIT V 2.5 3.0 100 100 100 2000 5000 20 30000 V V μA μA μA IC= 6A; IB= 6mA B VCB= 160V; IE= 0 VCE= 140V; IB= 0 VEB= 5V; IC= 0 IC= 1A; VCE= 5V IC= 6A; VCE= 5V IC= 0.5A; VCE= 10V MHz Switching Times ton tstg tf Turn-on Time Storage Time Fall Time VCC= 50V, IC= 6A; IB1= -IB2= 6mA, 2.5 5.0 2.5 μs μs μs hFE-2 Classifications Q 5000-15000 P 8000-30000 isc Website：www.iscsemi.cn 2