2SD2256

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2256 DESCRIPTION ·High DC Current Gain : hFE= 2000(Min.)@ IC= 12A, VCE= 4V ·High Collector-Emitter Breakdown Voltage: V(BR)CEO = 120V(Min) APPLICATIONS ·Designed for low frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 120 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 25 A ICM Collector Current-Peak Collector Power Dissipation @TC=25℃ Junction Temperature 35 A PC 120 W Tj 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD2256 MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 200mA, RBE= ∞ 120 V V(BR)CBO Collector-Base Breakdown Voltage IC= 0.1mA, IE= 0 120 V V(BR)CEO Collector-Emitter Breakdown Voltage IC= 25mA, RBE= ∞ 120 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 50mA, IC= 0 7 V VCE(sat)-1 Collector-Emitter Saturation Voltage IC= 12A ,IB= 24mA 2.0 V VCE(sat)-2 Collector-Emitter Saturation Voltage IC= 25A ,IB= 250mA 3.5 V VBE(sat)-1 Base-Emitter Saturation Voltage IC= 12A ,IB= 24mA 3.0 V VBE(sat)-2 Base-Emitter Saturation Voltage IC= 25A ,IB= 250mA 4.5 V ICBO Collector Cutoff current VCB= 100V, IE= 0 10 μA ICEO Collector Cutoff current VCE= 100V, RBE= ∞ 10 μA hFE-1 DC Current Gain IC= 12A ; VCE= 4V 2000 20000 hFE-2 DC Current Gain IC= 25A ; VCE= 4V 500 isc Website：www.iscsemi.cn