2SD2257

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2257 DESCRIPTION ・With TO-220F package ・High DC current gain ・Low saturation voltage ・Complement to type 2SB1495 ・DARLINGTON APPLICATIONS ・High power switching applications ・Hammer drive,pulse motor drive applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Ta=25℃ PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 20 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 100 100 8 ±3 ±5 0.3 2.0 W UNIT V V V A A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 VECF PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage CONDITIONS IC=10mA ;IB=0 IC=1.5A ;IB=1.5mA IC=1.5A ;IB=1.5mA VCB=100V ;IE=0 VEB=8V; IC=0 IC=1A ; VCE=2V IC=2A ; VCE=2V IE=1A 0.8 2000 2000 MIN 100 2SD2257 TYP. MAX UNIT V 1.5 2.0 10 4.0 V V μA mA 2.0 V Switching times ton ts tf Turn-on time Storage time Fall time IB1=-IB2=1.5mA VCC=30V ,RL=20Ω Duty cycle≤1% 0.5 2.0 0.5 μs μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2257 Fig.2 Outline dimensions 3