2SD2275

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2275 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 100V(Min) ·High DC Current Gain: hFE= 5000( Min.) @(IC= 4A, VCE= 5V) ·Low Collector Saturation Voltage: VCE(sat)= 2.5V(Max)@ (IC= 4A, IB= 4mA) ·Complement to Type 2SB1502 B APPLICATIONS ·Designed for power amplification. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 120 V VCEO Collector-Emitter Voltage 100 V VEBO IC Emitter-Base Voltage 5 V Collector Current-Continuous 5 A ICM Collector Current-Peak Collector Power Dissipation @Ta=25℃ 8 A 3.5 W PC Collector Power Dissipation @TC=25℃ TJ Tstg Junction Temperature 60 150 ℃ ℃ Storage Temperature -55~150 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO ICEO IEBO hFE-1 hFE-2 fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product CONDITIONS IC= 30mA; IB= 0 IC= 4A; IB= 4mA B 2SD2275 MIN 100 TYP. MAX UNIT V 2.5 3.0 100 100 100 2000 5000 20 30000 V V μA μA μA IC= 4A; IB= 4mA B VCB= 120V; IE= 0 VCE= 100V; IB= 0 VEB= 5V; IC= 0 IC= 1A; VCE= 5V IC= 4A; VCE= 5V IC= 0.5A; VCE= 10V MHz Switching Times ton tstg tf Turn-on Time Storage Time Fall Time VCC= 50V, IC= 4A; IB1= -IB2= 4mA, 2.5 3.5 1.0 μs μs μs hFE-2 Classifications Q 5000-15000 S 7000-21000 P 8000-30000 isc Website：www.iscsemi.cn 2