2SD2331

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2331 DESCRIPTION ·With TO-3PFa package ·High voltage;high speed ·Built-in damper diode APPLICATIONS ·For color TV horizontal output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base VALUE 1500 600 5 3.5 1 40 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD2331 TYP. MAX UNIT V(BR)EBO Emitter-base breakdown voltage IE=200mA , IC=0 5 V VCEsat VBEsat Collector-emitter saturation voltage IC=3A; IB=0.8A IC=3A ;IB=0.8A 3.0 5.0 V Base-emitter saturation voltage 1.5 V μA ICBO Collector cut-off current VCB=800V IE=0 10 hFE DC current gain IC=0.5A ; VCE=5V 8 fT Transition frequency IC=0.1A ; VCE=10V 3 MHz VF Diode forward voltage IF=3.5A 2.0 V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2331 Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3