2SD2335

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2335 DESCRIPTION ·With TO-3PFa package ·High voltage;high speed ·Built-in damper diode APPLICATIONS ·For color TV horizontal output applications PINNING PIN 1 2 3 Base Collector Emitter DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base VALUE 1500 600 5 7 1.5 100 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL VCEO(SUS) V(BR)EBO VCEsat VBEsat ICBO hFE VF PARAMETER Collector-emitter sustaining voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current DC current gain Diode forward voltage CONDITIONS IC=100mA , IB=0 IE=200mA , IC=0 IC=6A; IB=1.2A IC=6A; IB=1.2A VCB=800V IE=0 IC=1A ; VCE=5V IF=6A 8 MIN 600 5 2SD2335 TYP. MAX UNIT V V 5.0 1.5 10 V V μA 2.0 V 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2335 Fig.2 Outline dimensions (unindicated tolerance:±0.30mm) 3