2SD2349

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2349 DESCRIPTION ·With TO-3P(H)IS package ·Built-in damper diode ·High voltage ,high speed ·Low saturation voltage APPLICATIONS ·Horizontal deflection output for color TV PINNING PIN 1 2 3 DESCRIPTION Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol · Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 ±10 ±20 5 50 150 -55~150 V A A A W ℃ ℃ UNIT V Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 fT COB VF ts tf PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency Collector output capacitance Diode forward voltage Storage time ICP=7A ;IB1=1.4A;fH=15.75kHz Fall time CONDITIONS IE=300mA , IC=0 IC=7A ;IB=1.4A IC=7A ;IB=1.4A VCB=1500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=7A ; VCE=5V IC=0.1A ; VCE=10V IE=0 ; VCB=10V;f=1MHz IF=7A 83 10 6 1 3 MIN 5 2SD2349 TYP. MAX UNIT V 5.0 1.5 1 250 V V mA mA 9 MHz pF 1.8 12 0.7 V μs μs 170 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2349 Fig.2 Outline dimensions (unindicated tolerance:±0.15 mm) 3