2SD2374A

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2374 2SD2374A DESCRIPTION ·With TO-220F package ·Complement to type 2SB1548/1548A ·Low collector saturation voltage ·High forward current transfer ratio hFE which has satisfactory linearity APPLICATIONS ·For power amplifications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL PARAMETER 2SD2374 VCBO Collector-base voltage 2SD2374A 2SD2374 VCEO Collector-emitter voltage 2SD2374A VEBO IC ICM Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ℃ ℃ Open collector Open base 80 6 3 5 2 W V A A Open emitter 80 60 V CONDITIONS VALUE 60 V UNIT Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER Collector-emitter voltage 2SD2374 IC=30mA ; IB=0 2SD2374A IC=3A ;IB=0.375A IC=3A ; VCE=4V 2SD2374 2SD2374A 2SD2374 2SD2374A VCB=60V; IE=0 CONDITIONS 2SD2374 2SD2374A MIN 60 TYP. MAX UNIT VCEO V 80 1.2 1.8 V V VCEsat VBE Collector-emitter saturation voltage Base-emitter voltage Collector cut-off current ICBO 200 VCB=80V; IE=0 VCE=30V; IB=0 300 VCE=60V; IB=0 VEB=6V; IC=0 IC=1A ; VCE=4V IC=3A ; VCE=4V IC=0.5A ; VCE=10V 70 10 30 1 250 μA ICEO Collector cut-off current Emitter cut-off current DC current gain DC current gain Transition frequency μA IEBO hFE-1 hFE-2 fT mA MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=1.0A; IB1=-IB2=0.1A VCC=50V 0.5 2.5 0.4 μs μs μs hFE-1 Classifications Q 70-150 P 120-250 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2374 2SD2374A Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2374 2SD2374A 4