2SD2394

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2394 DESCRIPTION ・With TO-220F package ・Low collector saturation voltage ・Wide SOA (safe operating area) ・Complement to type 2SB1565 PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Ta=25℃ PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 25 150 -55~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS MAX 80 60 7 3 6 2 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO V(BR)CBO V(BR)EBO VCEsat VBEsat ICBO IEBO hFE COB fT PARAMETER Collector-emitter breakdown voltage Collector-base breakdown voltage Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=1mA ;IB=0 IC=50μA ;IE=0 IE=50μA ;IC=0 IC=2A ;IB=0.2A IC=2A ;IB=0.2A VCB=60V; IE=0 VEB=7V; IC=0 IC=0.5A ; VCE=5V IE=0 ; VCB=10V;f=1MHz IC=0.5A ; VCE=5V;f=5MHz 100 MIN 60 80 7 2SD2394 TYP. MAX UNIT V V V 1.0 1.5 10 10 320 35 8 V V μA μA pF MHz hFE Classifications E 100-200 F 160-320 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2394 Fig.2 Outline dimensions 3