2SD2399

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SC2139 DESCRIPTION ·High Collector-Emitter Breakdown Voltage: V(BR)CEO= 400V (Min) ·High Switching Speed APPLICATIONS ·Switching regulator and high voltage switching applications. ·High speed DC-DC converter applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous 10 A IB B Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature 2 A PC 100 W Tj 150 ℃ Tstg Storage Temperature Range -65~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SC2139 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 10mA; IB= 0 400 V V(BR)CBO Collector-Base Breakdown Voltage IC= 1mA; IE= 0 500 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 1mA; IC= 0 6 V VCE(sat) Collector-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 1.5 V VBE(sat) Base-Emitter Saturation Voltage IC= 5A; IB= 0.5A B 2.0 V hFE DC Current Gain IC= 5A; VCE= 5V 10 ICBO Collector Cutoff Current VCB= 400V; IE= 0 0.1 mA IEBO Emitter Cutoff Current VEB= 6V; IC= 0 1.0 mA Switching Times tr Rise Time VCC= 200V; IB1= -IB2= 0.5A; RL= 40Ω 1.0 μs tstg Storage Time 2.0 μs tf Fall Time 1.0 μs isc Website：www.iscsemi.cn