2SD2406

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2406 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 80V(Min) ·Collector Power Dissipation: PC= 25W@ TC= 25℃ ·Good Linearity of hFE APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 80 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 4 A IB Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature 0.4 A PC 25 W TJ 150 ℃ Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD2406 TYP. MAX UNIT V(BR)CEO Collector-Emitter Breakdown Voltage IC= 50mA; IB= 0 80 V V(BR)EBO Emitter-Base Breakdown Voltage IE= 10mA; IC= 0 5 V VCE(sat) VBE(on) ICBO Collector-Emitter Saturation Voltage IC= 3A; IB= 0.3A B 1.5 V Base-Emitter On Voltage IC= 3A; VCE= 5V VCB= 80V; IE= 0 1.5 V μA μA Collector Cutoff Current 30 IEBO Emitter Cutoff Current VEB= 5V; IC= 0 100 hFE-1 DC Current Gain IC= 0.5A; VCE= 5V 70 240 hFE-2 DC Current Gain IC= 3A; VCE= 5V 15 COB Output Capacitance IE= 0; VCB= 10V; ftest= 1MHz IC= 0.5A; VCE= 5V 90 pF fT Current-Gain—Bandwidth Product 8 MHz hFE-1 Classifications O 70-140 Y 120-240 isc Website：www.iscsemi.cn 2