2SD2439

Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2439 DESCRIPTION ・With TO-3PML package ・Complement to type 2SB1588 APPLICATIONS ・Audio ,series regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION ・ Absolute maximum ratings(Tc=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 160 150 5 10 1 80 150 -55~150 UNIT V V V A A W ℃ ℃ 1 Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Output capacitance CONDITIONS IC=50mA; IB=0 IC=7 A;IB=7m A IC=7 A;IB=7m A VCB=160V ;IE=0 VEB=5V; IC=0 IC=7A ; VCE=4V IC=2A ; VCE=12V IE=0; VCB=10V;f=1MHz 5000 55 95 MIN 150 2SD2439 TYP. MAX UNIT V 2.5 3.0 100 100 V V μA μA MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=7A;RL=10Ω IB1=-IB2=7mA VCC=70V 0.5 10.0 1.1 μs μs μs hFE classifications O 5000-12000 P 6500-20000 Y 15000-30000 2 Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors PACKAGE OUTLINE 2SD2439 Fig.2 Outline dimensions 3