2SD2449

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2449 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 160V(Min) ·High DC Current Gain: hFE= 3000( Min.) @(IC= 8A, VCE= 5V) ·Low Collector Saturation Voltage: VCE(sat)= 3.0V(Max)@ (IC= 8A, IB= 8mA) ·Complement to Type 2SB1594 B APPLICATIONS ·Designed for power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 160 V VCEO Collector-Emitter Voltage 160 V VEBO Emitter-Base Voltage 5 V IC Collector Current-Continuous 10 A IB B Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature 1 A PC 150 W ℃ TJ 150 Tstg Storage Temperature -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(on) ICBO ICEO IEBO hFE-1 hFE-2 fT COB PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter On Voltage Collector Cutoff Current Collector Cutoff Current Emitter Cutoff Current DC Current Gain DC Current Gain Current-Gain—Bandwidth Product Output Capacitance CONDITIONS IC= 50mA ; IB= 0 IC= 8A; IB= 8mA B 2SD2449 MIN 160 TYP. MAX UNIT V 3.0 3.0 100 100 100 3000 2000 30 150 20000 V V μA μA μA IC= 8A; VCE= 5V VCB= 160V; IE= 0 VCE= 160V; IB= 0 VEB= 5V; IC= 0 IC= 8A; VCE= 5V IC= 12A; VCE= 5V IC= 1A; VCE= 5V IE= 0; VCB= 10V; ftest= 1MHz MHz pF hFE-1 Classifications A 3000-10000 B 5000-15000 C 7000-20000 isc Website：www.iscsemi.cn 2