2SD2454

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2454 DESCRIPTION ・With TO-3P(H)IS package ・High voltage ;high speed ・Low saturation voltage ・Built-in damper diode APPLICATIONS ・Horizontal deflection output for color TV PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1700 600 5 7 14 3.5 50 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2454 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 VF Cob fT PARAMETER Base-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage Collector output capacitance Transition frequency CONDITIONS IE=400mA ;IC=0 IC=6A; IB=1.2A IC=6A; IB=1.2A VCB=1700V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=6A ; VCE=5V IF=7A IE=0 ; VCB=10V,f=1MHz IC=0.1A ; VCE=10V 1 66 8 5 1.5 250 3 13 8 2.0 pF MHz 0.9 MIN 5 5 1.5 1.0 200 TYP. MAX UNIT V V V mA μA Switching times : inductive load ts tf Storage time ICP=6A;IB1=1A fH =15.75kHz Fall time 0.3 0.7 9 12 μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2454 Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2454 4