2SD2495

Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2495 DESCRIPTION ・With TO-220F package ・Complement to type 2SB1626 APPLICATIONS ・For audio,series regulator and general purpose applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-220F) and symbol DESCRIPTION Absolute maximum ratings (Ta=25℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 110 110 5 6 1 30 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE fT COB PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Collector output capacitance CONDITIONS IC=50mA ;IB=0 IC=5A; IB=5mA IC=5A; IB=5mA VCB=110V; IE=0 VEB=5V; IC=0 IC=5A ; VCE=4V IC=0.5A ; VCE=12V f=1MHz;VCB=10V 5000 MIN 110 2SD2495 TYP. MAX UNIT V 2.5 3.0 0.1 0.1 V V mA mA 60 55 MHz pF Switching times ton ts tf Turn-on time Storage time Fall time IC=5A; IB1=-IB2=5mA VCC=30V ,RL=6Ω 0.8 6.2 1.1 μs μs μs hFE Classifications O 5000-12000 P 6500-20000 Y 15000-30000 2 Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors PACKAGE OUTLINE 2SD2495 Fig.2 Outline dimensions 3