2SD2498

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2498 DESCRIPTION ・With TO-3P(H)IS package ・High speed ・High voltage ・Low saturation voltage APPLICATIONS ・Horizontal deflection output for high resolution display, color TV ・High speed switching applications PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 6 12 3 50 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2498 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 Cob fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Collector output capacitance Transition frequency CONDITIONS IC=10mA ;IB=0 IC=4A; IB=0.8A IC=4A; IB=0.8A VCB=1500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=4A ; VCE=5V IE=0 ; VCB=10V,f=1MHz IC=0.1A ; VCE=10V 10 5 95 2 0.9 MIN 600 5 1.2 1 10 30 9 pF MHz TYP. MAX UNIT V V V mA μA Switching times : ts tf Storage time Fall time 7 0.4 10 0.7 μs μs ICP=4A;IB1=0.8A fH =15.75kHz 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2498 Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2498 4