2SD2500

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2500 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·Low Saturation Voltage APPLICATIONS ·Designed for Color TV horizontal deflection output applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 10 A ICP Collector Current- Pulse 20 A IB B Base Current- Continuous 5 A PC Collector Power Dissipation @ TC=25℃ 50 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD2500 TYP. MAX UNIT VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 1.5A B 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 1.5A B 1.4 V ICBO Collector Cutoff Current VCB= 1500V ; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V ; IC= 0 10 μA hFE -1 DC Current Gain IC= 1A ; VCE= 5V 10 30 hFE -2 DC Current Gain IC= 6A ; VCE= 5V 4 8 fT Current-Gain—Bandwidth Product IC= 0.1A ; VCE= 10V 1.7 MHz COB Output Capacitance IE= 0 ; VCB= 10V;ftest= 1.0MHz 135 pF Switching times tstg Storage Time ICP= 6A , IB1(end)= 1.5A, fH= 15.75kHz 11 μs tf Fall Time 0.7 μs isc Website：www.iscsemi.cn 2 INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2500 isc Website：www.iscsemi.cn