2SD2524

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2524 DESCRIPTION ·High Breakdown Voltage：VCBO= 1700V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode APPLICATIONS ·Designed for horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCES Collector-Emitter Voltage 1700 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 8 A ICM Collector Current-Peak 20 A IBM Base Current-Peak Collector Power Dissipation @ TC=25℃ 5 A 100 W PC Collector Power Dissipation @ Ta=25℃ TJ Junction Temperature 3 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD2524 TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 500mA ; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 6A; IB= 2A B 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 6A; IB= 2A B 1.5 V VCB= 1000V; IE= 0 ICBO Collector Cutoff Current VCB= 1700V; IE= 0 50 μA 1.0 mA hFE DC Current Gain IC= 6A; VCE= 5V 4 10 VECF C-E Diode Forward Voltage IF= 8A 2.0 V fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V 3 MHz Resistive Load ts Storage Time IC= 6A, IB(end)= 2A, Lleak= 5μH 12 μs tf Fall Time 0.8 μs isc Website：www.iscsemi.cn 2