2SD2550

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2550 DESCRIPTION ·High Breakdown Voltage：VCBO= 1700V (Min) ·High Switching Speed ·Low Saturation Voltage ·Built-in Damper Diode APPLICATIONS ·Designed for color TV horizontal deflection applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1700 V VCEO Collector-Emitter Voltage 600 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 4 A ICM Collector Current- Pulse 8 A IB B Base Current- Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature 2 A PC 50 W TJ 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD2550 TYP. MAX UNIT V(BR)EBO Emitter-Base Breakdown Voltage IE= 400mA; IC= 0 5 V VCE(sat) Collector-Emitter Saturation Voltage IC= 3A; IB= 0.8A B 8.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 3A; IB= 0.8A B 1.5 V ICBO Collector Cutoff Current VCB= 1700V; IE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 5V; IC= 0 66 200 mA hFE DC Current Gain IC= 1A; VCE= 5V 8 22 VECF C-E Diode Forward Voltage IF= 4A 2.0 V fT Current-Gain—Bandwidth Product IC= 0.1A; VCE= 10V 3 MHz COB Output Capacitance IE= 0; VCB= 10V; ftest=1.0MHz 85 pF Switching Times ts Storage Time ICP= 3A, IB1(end)= 0.8A, fH= 15.75kHz 10 μs tf Fall Time 0.6 μs isc Website：www.iscsemi.cn 2