2SD2560

Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors 2SD2560 DESCRIPTION ・With TO-3PN package ・Complement to type 2SB1647 APPLICATIONS ・Audio ,regulator and general purpose PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 150 150 5 15 1 130 150 -55~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCEsat VBEsat ICBO IEBO hFE Cob fT PARAMETER Collector-emitter breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Output capacitance Transition frequency CONDITIONS IC=30mA ;IB=0 IC=10A ;IB=10mA IC=10A ;IB=10mA VCB=150V ;IE=0 VEB=5V; IC=0 IC=10A ; VCE=4V IE=0 ; VCB=10V;f=1MHz IC=2A ; VCE=12V 5000 120 70 MIN 150 TYP. 2SD2560 MAX UNIT V 2.5 3.0 100 100 V V μA μA pF MHz Switching times ton ts tf Turn-on time Storage time Fall time IC=10A;RL=4Ω IB1=-IB2=10mA VCC=40V 0.8 4.0 1.2 μs μs μs hFE Classifications O 5000-12000 P 6500-20000 Y 15000-30000 2 Inchange Semiconductor Product Specification Silicon NPN Darlington Power Transistors PACKAGE OUTLINE 2SD2560 Fig.2 outline dimensions (unindicated tolerance:±0.1mm) 3