2SD2579

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2579 DESCRIPTION ・With TO-3PML package ・High speed ・High breakdown voltage ・High reliability APPLICATIONS ・Color TV horizontal deflection output PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector power dissipation 3 Tj Tstg Junction temperature Storage temperature 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 8 20 60 W UNIT V V V A A 1 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD2579 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 800 V VCEsat Collector-emitter saturation voltage IC=5 A;IB=1A 5 V VBEsat Base-emitter saturation voltage IC=5 A;IB=1A 1.5 V ICBO Collector cut-off current VCB=800V ;IE=0 10 μA ICES Collector cut-off current VCE=1500V ;RBE=0 1.0 mA IEBO Emitter cut-off current VEB=4V; IC=0 1.0 mA hFE-1 DC current gain IC=5A ; VCE=5V 5 8 hFE-2 DC current gain IC=1A ; VCE=5V IC=4A;RL=50Ω IB1=0.8A;-IB2=1.6A;VCC=200V 20 35 tf Fall time 0.3 μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2579 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2579 4