2SD2580

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2580 DESCRIPTION ・With TO-3PML package ・High speed ・High breakdown voltage ・High reliability ・Built-in damper diode APPLICATIONS ・Color TV horizontal deflection output PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector power dissipation 3 Tj Tstg Junction temperature Storage temperature 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 10 30 70 W UNIT V V V A A 1 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD2580 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 800 V VCEsat VBEsat Collector-emitter saturation voltage IC=8 A;IB=1.6A IC=8 A;IB=1.6A 5 V Base-emitter saturation voltage 1.5 V μA ICBO Collector cut-off current VCB=800V; IE=0 10 ICES Collector cut-off current VCE=1500V ;RBE=0 1.0 mA IEBO Emitter cut-off current VEB=4V; IC=0 40 130 mA hFE-1 DC current gain IC=8A ; VCE=5V 5 8 hFE-2 tf DC current gain IC=1A ; VCE=5V IC=6A;RL=33.3Ω IB1=1.2A;-IB2=2.4A;VCC=200V 15 30 μs Fall time 0.3 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2580 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2580 4