2SD2586

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2586 DESCRIPTION ・With TO-3P(H)IS package ・High voltage ,high speed ・Low saturation voltage ・Bult-in damper type APPLICATIONS ・Horizontal deflection output for color TV PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 1500 600 5 5 10 2.5 50 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2586 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO VCEsat VBEsat ICBO IEBO hFE-1 hFE-2 VF Cob fT PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain DC current gain Diode forward voltage Collector output capacitance Transition frequency CONDITIONS IC=300mA ;IB=0 IC=3.5A; IB=0.8A IC=3.5A; IB=0.8A VCB=1500V; IE=0 VEB=5V; IC=0 IC=1A ; VCE=5V IC=3.5A ; VCE=5V IF=5A IE=0 ; VCB=10V,f=1MHz IC=0.1A ; VCE=10V 70 8 4.4 1.5 73 2.5 0.9 MIN 5 5 1.5 1 250 28 8.5 2.0 V pF MHz TYP. MAX UNIT V V V mA mA Switching times : ts tf Storage time ICP=3.5A;IB1=0.8A fH =15.75kHz Fall time 0.3 0.6 7.5 10 μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2586 Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2586 4