2SD2599

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2599 DESCRIPTION ・With TO-3P(H)IS package ・High voltage;high speed ・Low saturation voltage ・Bult-in damper diode APPLICATIONS ・Horizontal deflection output for color TV PINNING PIN 1 2 3 Base Collector Emitter Fig.1 simplified outline (TO-3P(H)IS) and symbol DESCRIPTION Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM IB PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Base current Total power dissipation Junction temperature Storage temperature TC=25℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 600 5 3.5 7 1 40 150 -55~150 UNIT V V V A A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2599 CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)EBO VCEsat VBEsat ICBO IEBO hFE VF Cob fT PARAMETER Emitter-base breakdown voltage Collector-emitter saturation voltage Base-emitter saturation voltage Collector cut-off current Emitter cut-off current DC current gain Diode forward voltage Collector output capacitance Transition frequency CONDITIONS IC=300mA ;IB=0 IC=3A; IB=0.8A IC=3A; IB=0.8A VCB=1500V; IE=0 VEB=5V; IC=0 IC=0.5A ; VCE=5V IF=3.5A IE=0 ; VCB=10V,f=1MHz IC=0.1A ; VCE=10V 66 8 1.5 55 3 MIN 5 5 0.9 8 1.5 1 200 25 2.0 V pF MHz TYP. MAX UNIT V V V mA mA Switching times : ts tf Storage time ICP=3A;IB1=0.8A fH =15.75kHz Fall time 0.5 1.0 7.5 10 μs μs 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2599 Fig.2 Outline dimensions (unindicated tolerance:±0.20 mm) 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2599 4