2SD2634

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2634 DESCRIPTION ・With TO-3PML package ・High speed ・High breakdown voltage ・High reliability ・Built-in damper diode APPLICATIONS ・Color TV horizontal deflection output PINNING PIN 1 2 3 Base Collector Fig.1 simplified outline (TO-3PML) and symbol Emitter DESCRIPTION ・ Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak TC=25℃ PC Collector power dissipation 3 Tj Tstg Junction temperature Storage temperature 150 -55~150 ℃ ℃ CONDITIONS Open emitter Open base Open collector VALUE 1500 800 6 8 20 65 W UNIT V V V A A 1 Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD2634 MAX UNIT VCEO(SUS) Collector-emitter sustaining voltage IC=100mA; IB=0 800 V VCEsat VBEsat Collector-emitter saturation voltage IC=4.5A;IB=0.9A IC=4.5A;IB=0.9A 3 V Base-emitter saturation voltage 1.5 V μA ICBO Collector cut-off current VCB=800V; IE=0 10 ICES Collector cut-off current VCE=1500V ;RBE=0 1.0 mA IEBO Emitter cut-off current VEB=4V; IC=0 40 130 mA hFE-1 DC current gain IC=5A ; VCE=5V 5 8 hFE-2 VF DC current gain IC=1A ; VCE=5V IEC=7A IC=3A;RL=66.7Ω IB1=0.6A;-IB2=1.2A;VCC=200V 10 Diode forward voltage 2 V μs tf Fall time 0.3 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD2634 Fig.2 Outline dimensions 3 Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD2634 4