2SD2642

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor 2SD2642 DESCRIPTION ·Collector-Emitter Breakdown Voltage: V(BR)CEO= 110V(Min) ·High DC Current Gain: hFE= 5000( Min.) @(IC= 5A, VCE= 4V) ·Low Collector Saturation Voltage: VCE(sat)= 2.5V(Max)@ (IC= 5A, IB= 5mA) ·Complement to Type 2SB1687 B APPLICATIONS ·Designed for audio, series regulator and general purpose applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 110 V VCEO Collector-Emitter Voltage 110 V VEBO IC Emitter-Base Voltage 5 V Collector Current-Continuous 6 A IB Base Current-Continuous Collector Power Dissipation @TC=25℃ Junction Temperature 1 A PC 30 W ℃ ℃ TJ Tstg 150 Storage Temperature -55~150 isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor ELECTRICAL CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL V(BR)CEO VCE(sat) VBE(sat) ICBO IEBO hFE COB fT PARAMETER Collector-Emitter Breakdown Voltage Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Collector Cutoff Current Emitter Cutoff Current DC Current Gain Output Capacitance Current-Gain—Bandwidth Product CONDITIONS IC= 30mA ; IB= 0 IC= 5A; IB= 5mA B 2SD2642 MIN 110 TYP. MAX UNIT V 2.5 3.0 100 100 5000 55 60 V V μA μA IC= 5A; IB= 5mA B VCB= 110V; IE= 0 VEB= 5V; IC= 0 IC= 5A; VCE= 4V IE= 0; VCB= 10V; ftest= 1MHz IE= -0.5A ; VCE= 12V pF MHz Switching Times ton tstg tf Turn-on Time Storage Time Fall Time VCC= 30V, RL= 6Ω, IC= 5A; IB1= -IB2= 5mA, 0.8 6.2 1.1 μs μs μs hFE Classifications O 5000-12000 P 6500-20000 Y 15000-30000 isc Website：www.iscsemi.cn 2