2SD2645

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2SD2645 DESCRIPTION ·High Breakdown Voltage: VCBO= 1500V (Min) ·High Switching Speed ·High Reliability ·Built-in Damper Diode APPLICATIONS ·Color TV horizontal deflection output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 1500 V VCEO Collector-Emitter Voltage 800 V VEBO Emitter-Base Voltage 5 V IC Collector Current- Continuous 10 A ICP Collector Current-Pulse Collector Power Dissipation @ Ta=25℃ 25 A 3 W PC Collector Power Dissipation @ TC=25℃ TJ Junction Temperature 80 150 ℃ Tstg Storage Temperature Range -55~150 ℃ isc Website：www.iscsemi.cn INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN 2SD2645 TYP. MAX UNIT VCEO(SUS) Collector-Emitter Sustaining Voltage IC= 100mA; IB= 0 800 V VCE(sat) Collector-Emitter Saturation Voltage IC= 7.2A; IB= 1.44A 3.0 V VBE(sat) Base-Emitter Saturation Voltage IC= 7.2A; IB= 1.44A 1.5 V ICBO Collector Cutoff Current VCB= 800V; IE= 0 10 μA ICES Collector Cutoff Current VCE= 1500V; RBE= 0 1.0 mA IEBO Emitter Cutoff Current VEB= 4V; IC= 0 40 130 mA hFE-1 DC Current Gain IC= 1A; VCE= 5V 15 hFE-2 DC Current Gain IC= 8A; VCE= 5V 5 8 VECF C-E Diode Forward Voltage IF= 8A 2.0 V tf Fall Time IC= 5A, IB1= 1A; IB2= -2A 0.3 μs isc Website：www.iscsemi.cn 2