2SD315

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD315 DESCRIPTION ·With TO-66 package ·Complement to type 2SB509 APPLICATIONS ·For use in audio frequency power amplifier application PINNING(see Fig.2) PIN 1 2 3 Base Emitter Collector Fig.1 simplified outline (TO-66) and symbol DESCRIPTION Absolute maximum ratings(Ta=℃) SYMBOL VCBO VCEO VEBO IC ICM PC Tj Tstg PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current-peak Collector power dissipation Junction temperature Storage temperature TC=25℃ Open emitter Open base Open collector CONDITIONS VALUE 60 60 5 4 10 35 150 -40~150 UNIT V V V A A W ℃ ℃ Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD315 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0 60 V VCEsat Collector-emitter saturation voltage IC=2A; IB=0.2A 1.0 V VBE Base-emitter on voltage IC=1A ; VCE=2V 1.5 V ICBO Collector cut-off current VCB=20V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=4V; IC=0 1.0 mA hFE-1 DC current gain IC=1A ; VCE=2V 40 320 hFE-2 DC current gain IC=0.1A ; VCE=2V 40 fT Transition frequency IC=0.5A ; VCE=5V 8 MHz hFE-1 Classifications C 40-80 D 60-120 E 100-200 F 160-320 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD315 Fig.2 outline dimensions 3