2SD325

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SD325 DESCRIPTION ·With TO-220C package ·Complement to type 2SB511 ·Low collector saturation voltage APPLICATIONS ·Designed for use in low frequency power amplifier applications PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter DESCRIPTION · Absolute maximum ratings(Ta=25℃) SYMBOL VCBO VCEO VEBO IC ICM PARAMETER Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Collector current -peak Ta=25℃ PC Collector dissipation TC=25℃ Tj Tstg Junction temperature Storage temperature 10 150 -50~150 ℃ ℃ Open emitter Open base Open collector CONDITIONS VALUE 35 35 5 1.5 3.0 1.75 W UNIT V V V A A Inchange Semiconductor Product Specification Silicon NPN Power Transistors CHARACTERISTICS Tj=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS MIN TYP. 2SD325 MAX UNIT V(BR)CEO Collector-emitter breakdown voltage IC=10mA; IB=0 35 V VCEsat VBE Collector-emitter saturation voltage IC=1.5A; IB=0.15A IC=1A ; VCE=5V 1.0 V Base-emitter on voltage 1.5 V ICBO Collector cut-off current VCB=20V; IE=0 0.1 mA IEBO Emitter cut-off current VEB=4V; IC=0 1.0 mA hFE-1 DC current gain IC=1A ; VCE=2V 40 320 hFE-2 DC current gain IC=0.1A ; VCE=2V 35 fT Transition frequency IC=0.5A ; VCE=5V 8 MHz hFE-1 Classifications C 40-80 D 60-120 E 100-200 F 160-320 2 Inchange Semiconductor Product Specification Silicon NPN Power Transistors PACKAGE OUTLINE 2SD325 Fig.2 Outline dimensions (unindicated tolerance:±0.10mm) 3